Classical Physics

Fundaments of a Theory of Aether – Part 2

Authors: Ionel Dinu
Comments: 17 Pages.

In this work computational fluid dynamics (CFD) is for the first time applied to the field of electrostatics. It is possible to treat electrostatics mechanically because the interacting particles, which present science calls “charged with electricity”, are in this theory considered to be charged with energy, vibrating and transmitting their vibrations to one another through the liquid aether. The aim of this work is to show that the concept of “electric charge” in use today, employing action at a distance and explaining nothing as to how the action of charged particles on one another takes place, can be replaced with the concept of energy charge which, besides being simpler, has the advantage of offering a mechanical explanation of the electrostatic action. The attractions and repulsions produced by energy charged particles vibrating in a liquid are consistent with those observed in electrostatic phenomena, which makes the concept of “electric charge” an unnecessary and artificial invention.
Category: Classical Physics

On Completeness of One Analytical Solution in Electrodynamics

Authors: Zafar Turakulov
Comments: 5 Pages.

An analytical solution of the equation $\dif\,{}^\ast\dif\alpha=0$ where the 1-form $\alpha$ stands for ``vector potential'' of electromagnetic field of uniformly accelerated charge presented in the work \cite{jgp}, was obtained in an incomplete coordinate system. Incompleteness of the system used gives rise to doubts about correctness of the solution because of possible presence of extra sources of the filed beyond the chart of the covered by coordinates. A rigorous criterion of existence or non-existence of extra sources of this sort is proposed which was appliel to the solution. As a result, it is found that no extra sources beyond the chart exist and hence, the solution describes the field on uniformly accelerated charge properly. However, this fact discloses another discrepancy in foundations of the field theory.
Category: Classical Physics

UV Lithography System

Authors: Kenneth C. Johnson
Comments: 29 Pages.

A multifunction UV or DUV (ultraviolet/deep-ultraviolet) lithography system uses a modified Schwarzschild flat-image projection system to achieve diffraction-limited, distortion-free and double-telecentric imaging over a large image field at high numerical aperture. A back-surface primary mirror enables wide-field imaging without large obscuration loss, and additional lens elements enable diffraction-limited and substantially distortion-free, double-telecentric imaging. The system can perform maskless lithography (either source-modulated or spatially-modulated), mask-projection lithography (either conventional imaging or holographic), mask writing, wafer writing, and patterning of large periodic or aperiodic structures such as microlens arrays and spatial light modulators, with accurate field stitching to cover large areas exceeding the image field size.
Category: Classical Physics

The Theorem on the Magnetic Field of Rotating Charged Bodies

Authors: Sergey G. Fedosin
Comments: 13 Pages. [Corrections are made by viXra Admin to comply with the rules of viXra.org] Published in Progress In Electromagnetics Research M, Vol. 103, pp. 115-127 (2021). http://dx.doi.org/10.2528/PIERM21041203.

The method of retarded potentials is used to derive the Biot-Savart law, taking into account the correction that describes the chaotic motion of charged particles in rectilinear currents. Then this method is used for circular currents and the following theorem is proved: The magnetic field on the rotation axis of an axisymmetric charged body or charge distribution has only one component directed along the rotation axis, and the magnetic field is expressed through the surface integral, which does not require integration over the azimuthal angle ϕ . In the general case, for arbitrary charge distribution and for any location of the rotation axis, the magnetic field is expressed through the volume integral, in which the integrand does not depend on the angle ϕ . The obtained simple formulas in cylindrical and spherical coordinates allow us to quickly find the external and central magnetic field of rotating bodies on the rotation axis.
Category: Classical Physics

Extra-Spatial Basis of Spatial World. Principles of Panory

Authors: A. N. Pan
Comments: 33 Pages.

A description of the matter and the world structure based on the action-duration change is proposed. The concept of place and spatial relations for its harmonics are introduced. The world emergence from extra-spatial noise and its development to the over-noisy spatial structure are studied. The environment hidden behind the seemingly empty space has a huge density and is the cause of electric and gravity fields. There is an endless chain of interconnected and controlled worlds. An explanation of the particle structure was proposed. Modern physical theories may be derived from this representation.
Category: Classical Physics

High-Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor with Temperature Compensation

Authors: Mikhail Basov
Comments: 12 Pages. Sensors and Actuators A: Physical, https://doi.org/10.1016/j.sna.2019.111705

The paper presents MEMS pressure sensor chip utilizing novel electrical circuit with bipolar-junction transistor-based (BJT) differential amplifier with negative feedback loop (PDA-NFL). Pressure sensor chips with two circuits have been manufactured and tested: the first chip uses circuit with vertical n-p-n (V-NPN) BJTs and the second – circuit with horizontal p-n-p (L-PNP) BJTs. The demonstrated approach allows for increase of pressure sensitivity while keeping the same chip size. It also can be used for chip size reduction and increase of pressure overload capability while maintaining the same pressure sensitivity. Significant reduction of both noise and temperature instability of output signal has been demonstrated using transistor amplifier with negative feedback loop.
Category: Classical Physics

Development of High-Sensitivity Pressure Sensor with on-Chip Differential Transistor Amplifier

Authors: Mikhail Basov
Comments: 10 Pages. Journal of Micromechanics and Microengineering, https://doi.org/10.1088/1361-6439/ab82f1

A mathematical model of a high-sensitivity pressure sensor with a novel electrical circuit utilizing piezosensitive transistor differential amplifier with negative feedback loop (PDA-NFL) is presented. Circuits utilizing differential transistor amplifiers based on vertical n-p-n and lateral p-n-p transistors are analyzed and optimized for sensitivity to pressure and stability of output signal in operating temperature range. Parameters of fabrication process necessary for modeling of I-V characteristics of transistors are discussed. The results of the model are sufficiently close to the experimental data.
Category: Classical Physics

Development of High-Sensitivity Piezoresistive Pressure Sensors for 0.5…+0.5 Kpa

Authors: Mikhail Basov
Comments: 8 Pages. Journal of Micromechanics and Microengineering, https://doi.org/10.1088/1361-6439/ab9581

A mathematical model of an ultrahigh sensitivity piezoresistive chip of a pressure sensor with a range from -0.5 to 0.5 kPa has been developed. The optimum geometrical dimensions of a specific silicon membrane with a combination of rigid islands to ensure a trade-off relationship between sensitivity (Ssamples = 34.5 mV/kPa/V) and nonlinearity (2KNL samples = 0.81 %FS) have been determined. The paper also studies the range of the membrane deflection and makes recommendations on position of stops limiting diaphragm deflection in both directions; the stops allow for increasing burst pressure Pburst up to 450 кPa. The simulated data has been related to that of experimental samples and their comparative analysis showed the relevance of the mathematical model (estimated sensitivity and nonlinearity errors calculated on the basis of average values are 1.5% and 19%, respectively).
Category: Classical Physics

Investigation of High Sensitivity Piezoresistive Pressure Sensors for 0.5…+0.5 Kpa

Authors: Mikhail Basov, D. Prigodskiy
Comments: 7 Pages. IEEE Sensors, https://doi.org/10.1109/JSEN.2020.2980326

The investigation of the pressure sensor chip’s design developed for operation in ultralow differential pressure ranges has been conducted. The optimum geometry of a membrane has been defined using available technological resources. The pressure sensor chip with an area of 6.15х6.15 mm has an average sensitivity S of 34.5 mV/кPa/V at nonlinearity 2KNL = 0.81 %FS and thermal hysteresis up to 0.6 %FS was created. Owing to the chip connection with stop elements, the burst pressure reaches 450 кPa.
Category: Classical Physics

Ultra-High Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor for -1…+1 kPa

Authors: Mikhail Basov
Comments: 7 Pages. IEEE Sensors, https://doi.org/10.1109/JSEN.2020.3033813 [Corrections are made by viXra Admin to comply with the rules of viXra.org]

The theoretical model and experimental characteristics of ultra-high sensitivity MEMS pressure sensor chip for the range of -1...+1 kPa utilizing a novel electrical circuit are presented. The electrical circuit uses piezosensitive differential amplifier with negative feedback loop (PDA-NFL) based on two bipolar-junction transistors (BJT). The BJT has a vertical structure of n-p-n type (V-NPN) formed on a non-deformable chip area. The circuit contains eight piezoresistors located on a profiled membrane in the areas of maximum mechanical stresses. The circuit design provides a balance between high pressure sensitivity (S = 44.9 mV/V/kPa) and fairly low temperature dependence of zero output signal (TCZ = 0.094% FS/°C). Additionally, high membrane burst pressure of P = 550 kPa was reached.
Category: Classical Physics

High Sensitive, Linear and Thermostable Pressure Sensor Utilizing Bipolar Junction Transistor for 5 kPa

Authors: Mikhail Basov
Comments: 8 Pages. Physica Scripta, https://doi.org/10.1088/1402-4896/abf536

Research of pressure sensor chip utilizing novel electrical circuit with bipolar-junction transistor-based (BJT) piezosensitive differential amplifier with negative feedback loop (PDA-NFL) for 5 kPa differential range was done. The significant advantages of developed chip PDA-NFL in the comparative analysis of advanced pressure sensor analogs, which are using the Wheatstone piezoresistive bridge, are clearly shown. The experimental results prove that pressure sensor chip PDA-NFL with 4.0x4.0 mm2 chip area has sensitivity S = 11.2 ± 1.8 mV/V/kPa with nonlinearity of 2KNLback = 0.11 ± 0.09 %/FS (pressure is applied from the back chip side) and 2KNLtop = 0.18 ± 0.09 %/FS (pressure is applied from the top chip side). All temperature characteristics have low errors, because the precision elements balance of PDA-NFL electric circuit was used. Additionally, the burst pressure is 80 times higher than the working range.
Category: Classical Physics

Schottky Diode Temperature Sensor for Pressure Sensor

Authors: Mikhail Basov
Comments: 12 Pages. Sensors and Actuators A: Physical, https://doi.org/10.1016/j.sna.2021.112930

The small silicon chip of Schottky diode (0.8x0.8x0.4 mm3) with planar arrangement of electrodes (chip PSD) as temperature sensor, which functions under the operating conditions of pressure sensor, was developed. The forward I-V characteristic of chip PSD is determined by potential barrier between Mo and n-Si (ND = 3 × 1015 cm-3). Forward voltage UF = 208 ± 6 mV and temperature coefficient TC = -1.635 ± 0.015 mV/⁰C (with linearity kT <0.4% for temperature range of -65 to +85 ⁰C) at supply current IF = 1 mA is achieved. The reverse I-V characteristic has high breakdown voltage UBR > 85 V and low leakage current IL < 5 μA at 25 ⁰C and IL < 130 μA at 85 ⁰C (UR = 20 V) because chip PSD contains the structure of two p-type guard rings along the anode perimeter. The application of PSD chip for wider temperature range from -65 to +115 ⁰C is proved. The separate chip PSD of temperature sensor located at a distance of less than 1.5 mm from the pressure sensor chip. The PSD chip transmits input data for temperature compensation of pressure sensor errors by ASIC and for direct temperature measurement.
Category: Classical Physics

Investigation of Sensitive Element for Pressure Sensor Based on Bipolar Piezotransistor

Authors: Mikhail Basov, D.M. Prigodskiy
Comments: 12 Pages. [Corrections are made by viXra Admin to comply with the rules of viXra.org]

The paper summarizes results of investigation of high-sensitivity MEMS pressure sensor based on a circuit containing both active and passive stress-sensitive elements: a differential am-plifier utilizing two n-p-n piezotransistors and for p-type piezoresistors. A comparative analysis of a sensor utilizing this circuit with a pressure sensor based on traditional piezoresistive Wheatstone bridge and built on the same mechanical part is provided. MEMS pressure sensor with the differential amplifier (PSDA) has sensitivity of S = 0.66 mV/kPa/V, which exceeded the sensi-tivity of the element with piezoresistive Wheatstone bridge (PSWB) by 2.2 times. The sensitivity increase allows for the following sensor improvements: die size reduction, increase of diaphragm mechanical strength while keeping high pressure sensitivity, and simplifying requirements to ex-ternal processing of the pressure sensor output signal. There are two main challenges related to the use of PSDA-based pressure sensors: strong dependence of output signal on temperature and higher than in PSWB noise reducing the dynamic range of the device to 103. The article describes methods of addressing these problems. The temperature dependence of sensor output signal can be minimized with help of an offset thermal compensation circuit and by eliminating me-tallization at the thin part of the diaphragm. The noise can be minimized by reducing the thick-ness of the active base region of the transistor. Circuit analysis with software NI Multisim shows that sensitivity of PSDA-based pressure sensor can be increased 2.3 times by circuit optimization.
Category: Classical Physics

Modeling of Sensitive Element for Pressure Sensor Based on Bipolar Piezotransistor

Authors: Mikhail Basov, D.M. Prigodskiy
Comments: 12 Pages.

The paper describes modeling of high-sensitivity MEMS pressure sensor based on a circuit containing both active and passive stress-sensitive elements: a differential amplifier utilizing two n-p-n transistors and four p-type piezoresistors. The analysis on the basis of the developed mathematical model for a pressure sensor with traditional piezoresistive Wheatstone bridge and theoretical conclusions regarding the change in the electrical parameters of a bipolar transistor under the influence of deformation was carried out.
Category: Classical Physics

Zu Den Induktionskonstanten ε_0 Und μ_0 (About the Induction Constants ε_0 and μ_0)

Authors: Dieter Grosch
Comments: 2 Pages. [Corrections are made by viXra Admin to comply with the rules of viXra.org - Please conform!]

Es wird gezeigt, dass die Induktionskonstanten, die heute noch als Naturkonstanten betrachte werden, nur reziproke Feldstärken der Erde sind, die durch ihre Bewegung entstehen, mit denen man die elektrischen Einheiten definiert. Dadurch ist man in der Lage, sie als Verhältnis zu diesen zu beschreiben.

It is shown that the induction constants, which are still considered to be natural constants today, are only reciprocal field strengths of the earth that arise through its movement, with which the electrical units are defined. This enables one to describe them as a relationship to them.
Category: Classical Physics

Nuclear Magnetic Moments, Stretched Octaves, Tones, and the Golden Ratio. a Symphony.

Authors: Bruno R Galeffi
Comments: 12 Pages.

The boundless variety of oscillatory patterns pervading the vacuum constitutes the background of the physical universe. Nuclear magnetic moments appear to be the partition played by nuclides in relation to this musical universe, conducted by the master golden ratio. A classification of chemical elements through their nuclear moments is set forth with respect to nine stretched octaves and thirty six tones.
Category: Classical Physics